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| Schottky Barrier Diodes (SBD) MA3S781D Silicon epitaxial planar type Unit : mm 0.28 0.05 For high-speed switching circuits 1.60 - 0.03 0.80 0.80 0.51 0.51 0.80 1.60 0.1 0.80 0.05 I Features * SS-mini type 3-pin package * Allowing high-density mounting * Anode common type 1 + 0.05 3 2 I Absolute Maximum Ratings Ta = 25C Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double Single Double Tj Tstg IFM VR VRM IF 30 30 30 20 150 110 125 -55 to +125 C C mA V V mA 0.60 - 0.03 + 0.05 0.44 0.44 + 0.05 0.88 - 0.03 1 : Cathode 1 3 : Anode 1 2 : Cathode 2 Anode 2 SS-Mini Type Package (3-pin) Marking Symbol: M2P Internal Connection 1 3 2 Junction temperature Storage temperature I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1.0 65 Conditions Min Typ Max 1.0 0.4 1.0 Unit A V V pF ns % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.12 - 0.02 + 0.05 Parameter Symbol Rating Unit 0.28 0.05 0.28 0.05 1 MA3S781D IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.6 1.4 102 103 IR VR 102 75C 25C Forward current IF (mA) Forward voltage VF (V) Ta = 125C 10 - 20C 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 1 mA Reverse current IR (A) Ta = 125C 10 75C IF = 30 mA 1 1 10-1 10-1 25C 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 103 3.0 Ct VR 1 000 IF(surge) tW Ta = 25C 300 tW 100 30 10 3 1 0.3 0.1 0.03 IF(surge) 102 Reverse current IR (A) VR = 30 V 10 V 1V Terminal capacitance Ct (pF) 2.5 2.0 10 1.5 1 1.0 10-1 0.5 10-2 -40 0 Forward surge current IF(surge) (A) 0 40 80 120 160 200 0 5 10 15 20 25 30 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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